Resonant interband tunneling spin filter

Resonant magnetotunneling spectroscopy of p-type-well interband tunneling diodes.

We report experimental results of quantum transport through InAs/AlSb/GaSb/AlSb/InAs heterostructures having well widths of 7.0, 8.0, and 11.9 nm, respectively, in magnetic fields of up to 8.0 T aligned parallel to the epitaxial growth planes. Application of this resonant magnetotunneling spectroscopy technique allows the well subband dispersions to be probed along the wave vector perpendicular...

Bidirectional resonant tunneling spin pump

Resonant tunneling-based spin ratchets

We outline a generic ratchet mechanism for creating directed spin-polarized currents in ac-driven double well or double dot structures by employing resonant spin transfer through the system engineered by local external magnetic fields. We show its applicability to semiconductor nanostructures by considering coherent transport through two coupled lateral quantum dots, where the energy levels of ...

Spin-filter device based on the Rashba effect using a nonmagnetic resonant tunneling diode.

We propose an electronic spin-filter device that uses a nonmagnetic triple barrier resonant tunneling diode (TB-RTD). This device combines the spin-split resonant tunneling levels induced by the Rashba spin-orbit interaction and the spin blockade phenomena between two regions separated by the middle barrier in the TB-RTD. Detailed calculations using the InAlAs/InGaAs material system reveal that...

Si/SiGe Resonant Interband Tunneling Diodes Incorporating δ-Doping Layers Grown by Chemical Vapor Deposition

This is the first report of a Si/SiGe resonant interband tunneling diodes (RITDs) on silicon substrates grown by the chemical vapor deposition process. The nominal RITD structure forms two quantum wells created by sharp δ-doping planes which provide for a resonant tunneling condition through the intrinsic spacer. The vapor phase doping technique was used to achieve abrupt degenerate doping prof...